Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDWD120E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 |
210 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-65EPS16L-M3DIODE GEN PURP 1.6KV 65A TO247AD |
184 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
C6D08065E-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,370 |
|
|
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C6D08065G-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,300 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.4 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
C3D08065E-TRDIODE SIL CARB 650V 25.5A TO252 |
2,190 |
|
|
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
STPSC12065DDIODE SIL CARB 650V 12A TO220AC |
749 |
|
|
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
SDS120J010D3-ISARHDIODE 1200V-10A TO252-2L |
200 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
BSDD10S65E6DIODE SCHOT SIC 650V 10A TO252 |
4,995 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
BSDB10S65E6DIODE SCHOT SIC 650V 10A TO263 |
3,170 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
BSDL10S65E6DIODE SIC SCHTKY 650V 10A DFN8X8 |
2,697 |
|
|
- | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
FFSM1265ADIODE SIL CARB 650V 12.5A 4PQFN |
2,585 |
|
|
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12.5A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
PSC1065KQPSC1065K/SOT8021/TO220-2L |
974 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | 175°C |
|
IDWD60E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
187 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 99 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD75E120D7XKSA1DIODE GEN PURP 1200V 116A TO247 |
235 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 116A | 3 V @ 75 A | Fast Recovery =< 500ns, > 5A (Io) | 195 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-3C05ET12S2L-M35A 1200V SIC ZERO QRR SINGLE TJM |
796 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
IDWD75E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
210 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J012S3-ISARHDIODE 650V-12A DFN8*8-4L |
200 |
|
|
Sanan DFN8 | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 44A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | 651pF @ 0V, 1MHz | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 175°C |
|
PCDP0865GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
APT60D120SGDIODE GEN PURP 1.2KV 60A D3 |
156 |
|
|
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
FFSB2065BDIODE SIL CARB 650V 22.8A D2PAK |
2,178 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.8A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
