Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF3008PTHDIODE GEN PURP 600V 30A TO247AD |
688 |
|
|
- | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 175pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
SDS065J006S3-ISBRHDIODE 650V-6A DFN8*8-4L |
200 |
|
|
Sanan DFN8 | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 175°C |
|
SDS065J008D3-ISARHDIODE 650V-8A TO252-2L |
200 |
|
|
Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.3 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 24 µA @ 650 V | - | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
TRS8E65H,S1QG3 SIC-SBD 650V 8A TO-220-2L |
338 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
FFSD1065BDIODE SIL CARB 650V 13.5A DPAK |
4,116 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
SE30124-M3/I30A,1200V,DO-218AB RECTIFIER |
3,000 |
|
|
- | DO-218AB | Tape & Reel (TR) | Active | Standard | 1200 V | 4.2A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | 35pF @ 400V, 1MHz | - | - | Surface Mount | DO-218AB | -55°C ~ 175°C |
|
VS-20ETF12FP-M3DIODE GP 1.2KV 20A TO220-2FP |
695 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
|
BSDD08G65E2DIODE SCHOT SIC 650V 8A TO252 |
5,000 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
SIT10C065DIODE SIL CARB 650V 10A TO220AC |
980 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
VS-APU3006HN3DIODE GEN PURP 600V 30A TO247AC |
492 |
|
|
FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AC | -40°C ~ 150°C |
|
PCDF0465G1_T0_00601650V/4A THROUGH HOLE SILICON CAR |
2,000 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
FFSM0865BDIODE SIL CARB 650V 11.6A 4PQFN |
2,980 |
|
|
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
SDS065J008C3-ISATHDIODE 650V-8A TO220-2L |
200 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 25A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 24 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-20ETF04STRL-M3DIODE GEN PURP 400V 20A TO263AB |
7,894 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 400 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
PCDD0465GB_L2_00601650V/4A IN TO-252AA PACKAGE SILI |
3,000 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 261pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
TRS10V65H,LQG3 SIC-SBD 650V 10A DFN8X8 |
3,975 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
IDWD30E120D7XKSA1DIODE GEN PURP 1200V 52A TO247-2 |
120 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 52A | 3 V @ 30 A | Fast Recovery =< 500ns, > 5A (Io) | 135 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
D6015L52TPDIODE GP 600V 9.5A ITO220AB |
457 |
|
|
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 9.5A | 1.6 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 10 µA @ 600 V | - | - | - | Through Hole | ITO-220AB | -40°C ~ 125°C |
|
SIT12C065DIODE SIL CARB 650V 12A TO220AC |
1,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
IDWD20E65E7XKSA1HOME APPLIANCES 14 |
220 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 74 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
