Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFUH20TJ6SFHGC9SUPER FAST RECOVERY DIODE : RFUH |
1,000 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 |
4,472 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
SDS120J005C3-ISATHDIODE 1200V-5A TO220-2L |
200 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 400pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-3C10EV07T-M3/ISIC-G3-SLIMDPAK 2L |
4,391 |
|
|
eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
|
S6D20065ADIODE SCHOTTKY SILICON CARBIDE S |
250 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 61A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S3D15065IDIODE SCHOTTKY SILICON CARBIDE S |
990 |
|
|
- | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
SDS065J010D3-ISARHDIODE 650V-10A TO252-2L |
300 |
|
|
Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
S3D15065HDIODE SCHOTTKY SILICON CARBIDE S |
300 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L |
370 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
BSDD10G65E2DIODE SCHOT SIC 650V 10A TO252 |
9,660 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
IDWD50E120D7XKSA1DIODE GEN PURP 1200V 81A TO247-2 |
230 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 81A | 3 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 160 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J010C3-ISATHDIODE 650V-10A TO220-2L |
290 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
SDS120J010C3-ISATHDIODE 1200V-10A TO220-2L |
200 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSB0665ADIODE SIL CARB 650V 9A D2PAK-3 |
800 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP2065BDIODE SIL CARB 650V 22.5A TO220 |
397 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.5A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
SDS065J010E3-ISARHDIODE 650V-10A TO263-2L |
300 |
|
|
Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
BSDH10G120E2DIODE SIC 1200V 10A TO220-2 |
2,929 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
PCDP0465GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,931 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
IDK08G65C5XTMA2DIODE SIL CARB 650V 8A TO263-2 |
959 |
|
|
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
FFSD1065B-F085DIODE SIL CARB 650V 13.5A DPAK |
1,968 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
