Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-E5TX3012S2L-M3DIODE GEN PURP 1.2KV 30A TO263AB |
1,540 |
|
|
FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
S3D08065ADIODE SIL CARB 650V 23A TO220AC |
1,438 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 51 µA @ 650 V | 661pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
FFSP1065BDIODE SIL CARB 650V 11A TO220-2 |
628 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
VS-EPU6006-N3DIODE GP 600V 60A TO247AC |
475 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
|
IDL06G65C5XUMA2DIODE SIL CARBIDE 650V 6A VSON-4 |
2,908 |
|
|
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
FFSP0665ADIODE SIL CARB 650V 8.8A TO220L |
688 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8.8A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
DSI30-12AS-TUBDIODE GEN PURP 1.2KV 30A TO263AA |
1,195 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1200 V | 10pF @ 400V, 1MHz | - | - | Surface Mount | TO-263AA | -40°C ~ 175°C |
|
FFSD0865BDIODE SIL CARB 650V 11.6A DPAK |
148 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
SCS302AJTLLDIODE SIL CARB 650V 2.15A LPTL |
499 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 2.15A | 1.5 V @ 2.15 A | No Recovery Time > 500mA (Io) | 0 ns | 10.8 µA @ 650 V | 110pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
|
VS-10ETF10FP-M3DIODE GP 1KV 10A TO220-2FP |
442 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
|
VS-E5TH2112S2LHM320A, 1200V, "H" SERIES GEN 5 FRE |
850 |
|
|
FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 20A | 2.66 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
VS-E5PH3006LHN3DIODE GEN PURP 600V 30A TO247AD |
878 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 1.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 46 ns | 20 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-E5PX3006LHN3DIODE GEN PURP 600V 30A TO247AD |
490 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 41 ns | 20 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
APT40DQ120SGDIODE GEN PURP 1.2KV 40A D3PAK |
958 |
|
|
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 40A | 3.4 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
VS-E5TH1512S2LHM3DIODE GEN PURP 1.2KV 15A TO263AB |
815 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 15A | 2.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
VS-E5PH6006L-N3DIODE GEN PURP 600V 60A TO247AD |
705 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 54 ns | 25 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
S4D04120EDIODE SIL CARBIDE 1.2KV 4A DPAK |
1,787 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 4A | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 302pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
VS-E5PW6006LHN3DIODE GEN PURP 600V 60A TO247AD |
1,535 |
|
|
FRED Pt® Gen 5 | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.6 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
RFN20TJ6SFHGC9DIODE GP 600V 20A TO220ACFP |
978 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
UJ3D06516TSDIODE SIL CARB 650V 16A TO220-2 |
938 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
