Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UGS30JH

UGS30JH

DIODE GEN PURP 600V 30A TO263AB

Taiwan Semiconductor Corporation

808
RFQ
UGS30JHDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 1 µA @ 600 V 128pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VS-EPX3007L-N3

VS-EPX3007L-N3

DIODE GEN PURP 650V 30A TO247AD

Vishay General Semiconductor - Diodes Division

499
RFQ
VS-EPX3007L-N3Datasheet - TO-247-2 Tube Active Standard 650 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 30 µA @ 650 V - - - Through Hole TO-247AD -55°C ~ 175°C
IDP18E120XKSA1

IDP18E120XKSA1

DIODE GP 1.2KV 31A TO220-2-2

Infineon Technologies

423
RFQ
IDP18E120XKSA1Datasheet - TO-220-2 Tube Active Standard 1200 V 31A 2.15 V @ 18 A Fast Recovery =< 500ns, > 200mA (Io) 195 ns 100 µA @ 1200 V - - - Through Hole PG-TO220-2-2 -55°C ~ 150°C
S3D10065A

S3D10065A

DIODE SIL CARB 650V 10A TO220AC

SMC Diode Solutions

1,964
RFQ
S3D10065ADatasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 621pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
S3D06065G

S3D06065G

DIODE SIL CARBIDE 650V 6A D2PAK

SMC Diode Solutions

769
RFQ
S3D06065GDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
VS-8EWS12S-M3

VS-8EWS12S-M3

DIODE GEN PURP 1.2KV 8A DPAK

Vishay General Semiconductor - Diodes Division

2,945
RFQ
VS-8EWS12S-M3Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 1200 V 8A 1.1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
RFNL5TJ6SFHGC9

RFNL5TJ6SFHGC9

DIODE GEN PURP 600V 5A TO220ACFP

Rohm Semiconductor

2,739
RFQ
RFNL5TJ6SFHGC9Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 5A 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
RFUH20NS4STL

RFUH20NS4STL

DIODE GEN PURP 430V 20A LPDS

Rohm Semiconductor

944
RFQ
RFUH20NS4STLDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 430 V 20A 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 430 V - - - Surface Mount LPDS 150°C
RFN20NS4STL

RFN20NS4STL

DIODE GEN PURP 430V 20A LPDS

Rohm Semiconductor

883
RFQ
RFN20NS4STLDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 430 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 430 V - - - Surface Mount LPDS 150°C
DLA20IM800PC-TUB

DLA20IM800PC-TUB

DIODE GEN PURP 800V 20A TO263AA

IXYS

1,039
RFQ
DLA20IM800PC-TUBDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 800 V 20A 1.2 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 4pF @ 400V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
RF505TF6SC9

RF505TF6SC9

DIODE GEN PURP 600V 5A TO220NFM

Rohm Semiconductor

430
RFQ
RF505TF6SC9Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 5A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - - - Through Hole TO-220NFM 150°C
C3D03065E

C3D03065E

DIODE SIL CARB 650V 11A TO252-2

Wolfspeed, Inc.

2,356
RFQ
C3D03065EDatasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 11A 1.8 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 155pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
S4D05120A

S4D05120A

DIODE SIL CARB 1.2KV 5A TO220AC

SMC Diode Solutions

853
RFQ
S4D05120ADatasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
STTH12T06DI

STTH12T06DI

DIODE GP 600V 12A TO220AC INS

STMicroelectronics

548
RFQ
STTH12T06DIDatasheet - TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 12A 2.95 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 20 µA @ 600 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
VS-E5TX2112S2LHM3

VS-E5TX2112S2LHM3

20A, 1200V, "X" SERIES GEN 5 FRE

Vishay General Semiconductor - Diodes Division

835
RFQ
VS-E5TX2112S2LHM3Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 20A 3.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
IDP08E65D2XKSA1

IDP08E65D2XKSA1

DIODE GEN PURP 650V 8A TO220-2

Infineon Technologies

2
RFQ
IDP08E65D2XKSA1Datasheet - TO-220-2 Bulk Active Standard 650 V 8A 2.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 650 V - - - Through Hole TO-220-2 -40°C ~ 175°C
STTH30RQ06DY

STTH30RQ06DY

DIODE GEN PURP 600V 30A TO220AC

STMicroelectronics

998
RFQ
STTH30RQ06DYDatasheet - TO-220-2 Tube Active Standard 600 V 30A 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
DMA10P1200UZ-TRL

DMA10P1200UZ-TRL

DIODE GEN PURP 1.2KV 10A TO252AA

IXYS

1,673
RFQ
DMA10P1200UZ-TRLDatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 10A 1.55 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V 1pF @ 400V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
VS-E4PH6006LHN3

VS-E4PH6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

456
RFQ
VS-E4PH6006LHN3Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 68 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-3C08ET07T-M3

VS-3C08ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,934
RFQ
VS-3C08ET07T-M3Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 340pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

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Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

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Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

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