Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STPS20SM100ST

STPS20SM100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

887
RFQ
STPS20SM100STDatasheet - TO-220-3 Tube Active Schottky 100 V 20A 900 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 100 V - - - Through Hole TO-220 150°C (Max)
CBS05F30,L3F

CBS05F30,L3F

DIODE SCHOTTKY 30V 500MA CST2B

Toshiba Semiconductor and Storage

9,981
RFQ
CBS05F30,L3FDatasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 30 V 500mA - Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 118pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
VS-E5TX3012-M3

VS-E5TX3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

7,970
RFQ
VS-E5TX3012-M3Datasheet FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
DSEI25-06A

DSEI25-06A

DIODE GEN PURP 600V 25A TO220-2

IXYS

2,072
RFQ
DSEI25-06ADatasheet - TO-220-2 Tube Active Standard 600 V 25A 1.31 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V 20pF @ 400V, 1MHz - - Through Hole TO-220-2 -40°C ~ 150°C
RB078BGE30STL

RB078BGE30STL

DIODE SCHOTTKY 30V 5A TO252GE

Rohm Semiconductor

2,500
RFQ
RB078BGE30STLDatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - - - Surface Mount TO-252GE 150°C
RFN20TF6SFHC9

RFN20TF6SFHC9

DIODE GEN PURP 600V 20A TO220NFM

Rohm Semiconductor

458
RFQ
RFN20TF6SFHC9Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
S3D06065I

S3D06065I

DIODE SIL CARB 650V 6A TO220

SMC Diode Solutions

891
RFQ
S3D06065IDatasheet - TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Through Hole TO-220-Isolation -55°C ~ 175°C
RFN10NS3STL

RFN10NS3STL

DIODE GEN PURP 350V 10A LPDS

Rohm Semiconductor

975
RFQ
RFN10NS3STLDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 10A 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
RFUH20TJ6SGC9

RFUH20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

635
RFQ
RFUH20TJ6SGC9Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C
1N4938-1

1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

369
RFQ
1N4938-1Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
FFSD0665A

FFSD0665A

DIODE SIL CARBIDE 650V 11A DPAK

onsemi

2,396
RFQ
FFSD0665ADatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-EPH3006LHN3

VS-EPH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

180
RFQ
VS-EPH3006LHN3Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
S3D06065E

S3D06065E

DIODE SIL CARBIDE 650V 6A DPAK

SMC Diode Solutions

682
RFQ
S3D06065EDatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PX3006L-N3

VS-E5PX3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

636
RFQ
VS-E5PX3006L-N3Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
TPMR10J S1G

TPMR10J S1G

DIODE GEN PURP 600V 10A TO277A

Taiwan Semiconductor Corporation

2,672
RFQ
TPMR10J S1GDatasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V 140pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
UJ3D06512TS

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601
RFQ
UJ3D06512TSDatasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX1512S2LHM3

VS-E5TX1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

694
RFQ
VS-E5TX1512S2LHM3Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 3.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 77.5 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STPSC6H065D

STPSC6H065D

DIODE SIL CARB 650V 6A TO220AC

STMicroelectronics

958
RFQ
STPSC6H065DDatasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
VS-C4PU6006L-N3

VS-C4PU6006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

500
RFQ
VS-C4PU6006L-N3Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
SCS302AHGC9

SCS302AHGC9

DIODE SIC 650V 2.15A TO220ACP

Rohm Semiconductor

643
RFQ
SCS302AHGC9Datasheet - TO-220-2 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
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Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

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Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

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Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

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Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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