Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 |
6,617 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP1065G1_T0_00001TO-220AC, SIC |
1,478 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
4,000 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
IV1D06006P3DIODE SIC 650V 16.7A TO252-3 |
2,481 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
|
FFSPF1065ADIODE SIC 650V 10A TO220F-2FS |
930 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,797 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
STPSC1006DDIODE SIL CARB 600V 10A TO220AC |
166 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
WNSC6D16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
2,665 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
C6D10065ADIODE SIL CARB 650V 37A TO220-2 |
442 |
|
|
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPSC12H065DYDIODE SIL CARB 650V 12A TO220AC |
219 |
|
|
ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 600pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFH75H60SDIODE GEN PURP 600V 75A TO247-2 |
1,196 |
|
|
- | TO-247-2 | Tube | Obsolete | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F |
472 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
UJ3D1210KSDDIODE SIL CARB 1.2KV 5A TO247-3 |
528 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
SSTPAD100 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
6,215 |
|
|
PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
RURU50100DIODE AVALANCHE 1KV 50A TO218 |
2,668 |
|
|
- | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 1.9 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
JPAD100 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
940 |
|
|
PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
PAD100 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
2,990 |
|
|
PAD-DFN | 8-VFDFN Exposed Pad | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
PCFFS4065AFDIODE SIL CARBIDE 650V 40A DIE |
1,364 |
|
|
- | Die | Tray | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pf @ 1V, 100kHz | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
PAD50DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
|
PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
LSIC2SD065C08ADIODE SIL CARB 650V 23A TO252 |
2,288 |
|
|
Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
