Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
MUR820H

MUR820H

25NS, 8A, 200V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

1,000
RFQ
MUR820HDatasheet - TO-220-2 Tube Active Standard 200 V 8A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
SF1604G

SF1604G

DIODE GEN PURP 200V 16A TO220AB

Taiwan Semiconductor Corporation

991
RFQ
SF1604GDatasheet - TO-220-3 Tube Active Standard 200 V 16A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
BYW83TAP

BYW83TAP

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

11,750
RFQ
BYW83TAPDatasheet - SOD-64, Axial Cut Tape (CT) Active Avalanche 400 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 7.5 µs 1 µA @ 400 V 60pF @ 4V, 1MHz - - Through Hole SOD-64 -55°C ~ 175°C
V20PL63HM3/I

V20PL63HM3/I

20A, 60V, SMPC TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division

6,290
RFQ
V20PL63HM3/IDatasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 20A 640 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V 3400pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 150°C
SFS1008G

SFS1008G

DIODE GEN PURP 600V 10A TO263AB

Taiwan Semiconductor Corporation

1,597
RFQ
SFS1008GDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 10A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 600 V 50pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SF808G

SF808G

DIODE GEN PURP 600V 8A TO220AB

Taiwan Semiconductor Corporation

1,000
RFQ
SF808GDatasheet - TO-220-3 Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 50pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
MUR840H

MUR840H

50NS, 8A, 400V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

1,000
RFQ
MUR840HDatasheet - TO-220-2 Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
C3D02065E-TR

C3D02065E-TR

DIODE SIC 650V 8A TO252-2

Wolfspeed, Inc.

405
RFQ
C3D02065E-TRDatasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.8 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 120pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
TRS3E65H,S1Q

TRS3E65H,S1Q

G3 SIC-SBD 650V 3A TO-220-2L

Toshiba Semiconductor and Storage

388
RFQ
TRS3E65H,S1QDatasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 3A 1.35 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 199pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
MBR10100F_T0_00001

MBR10100F_T0_00001

10 AMPERES SCHOTTKY BARRIER RECT

Panjit International Inc.

2,154
RFQ
MBR10100F_T0_00001Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Schottky 100 V 10A 800 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V - - - Through Hole ITO-220AC -65°C ~ 175°C
VS-15ETL06HN3

VS-15ETL06HN3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

1,000
RFQ
VS-15ETL06HN3Datasheet FRED Pt® TO-220-2 Tube Active Standard 600 V 15A 1.05 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 175°C
VS-8ETU04HN3

VS-8ETU04HN3

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

1,000
RFQ
VS-8ETU04HN3Datasheet FRED Pt® TO-220-2 Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 43 ns 10 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
MUR860H

MUR860H

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

979
RFQ
MUR860HDatasheet - TO-220-2 Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
RB075BM40SFHHTL

RB075BM40SFHHTL

40V, 5A, TO-252, SUPER LOW IR SB

Rohm Semiconductor

2,500
RFQ
RB075BM40SFHHTLDatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 5A 750 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 40 V - Automotive AEC-Q101 Surface Mount TO-252 175°C
FT2000AD

FT2000AD

DIODE GEN PURP 200V 20A TO220AC

Diotec Semiconductor

1,000
RFQ
FT2000ADDatasheet - TO-220-2 Bulk Active Standard 200 V 20A 960 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 200 V - - - Through Hole TO-220AC -50°C ~ 150°C
RFN6RSM2STL1

RFN6RSM2STL1

200V 6A 14NS, TO-277A, ULTRA FAS

Rohm Semiconductor

4,000
RFQ
RFN6RSM2STL1Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 6A 930 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - - - Surface Mount TO-277A 175°C
YQ5RSM10SDTFTL1

YQ5RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 5A

Rohm Semiconductor

3,990
RFQ
YQ5RSM10SDTFTL1Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 5A 770 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 175°C
MA10EA06-TE12L

MA10EA06-TE12L

SCHOTTKY BARRIER DIODE, 1A, 60V,

KYOCERA AVX

2,775
RFQ
MA10EA06-TE12LDatasheet - DO-221BC, SMA Flat Leads Exposed Pad Tape & Reel (TR) Active Schottky 60 V 10A 560 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V - - - Surface Mount DO-221BC (MA) -55°C ~ 150°C
MBR8170TFSTXG

MBR8170TFSTXG

DIODE SCHOTTKY 170V 8A 8WDFN

onsemi

4,640
RFQ
MBR8170TFSTXGDatasheet - 8-PowerWDFN Tape & Reel (TR) Active Schottky 170 V 8A 890 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 170 V 237pF @ 1V, 1MHz - - Surface Mount 8-WDFN (3.3x3.3) -55°C ~ 175°C
UGF12JH

UGF12JH

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
UGF12JHDatasheet - TO-220-2 Full Pack Tube Active Standard 600 V 12A 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
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Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

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Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

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Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

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Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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