Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C3D06060F

C3D06060F

DIODE SIC 600V 11.5A TO220-F2

Wolfspeed, Inc.

1,323
RFQ
C3D06060FDatasheet Z-Rec® TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 600 V 11.5A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 294pF @ 0V, 1MHz - - Through Hole TO-220-F2 -55°C ~ 175°C
GD10MPS12E

GD10MPS12E

DIODE SIL CARB 1.2KV 29A TO252-2

GeneSiC Semiconductor

9,841
RFQ
GD10MPS12EDatasheet SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 29A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
VS-20ETF12S-M3

VS-20ETF12S-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

9,217
RFQ
VS-20ETF12S-M3Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
IDM05G120C5XTMA1

IDM05G120C5XTMA1

DIODE SIL CARB 1.2KV 5A TO252-2

Infineon Technologies

1,779
RFQ
IDM05G120C5XTMA1Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
VS-8EWF12STR-M3

VS-8EWF12STR-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

5,847
RFQ
VS-8EWF12STR-M3Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 100 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-8EWF06STR-M3

VS-8EWF06STR-M3

DIODE GEN PURP 600V 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,511
RFQ
VS-8EWF06STR-M3Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-8EWF12S-M3

VS-8EWF12S-M3

DIODE GEN PURP 1.2KV 8A TO252

Vishay General Semiconductor - Diodes Division

1,812
RFQ
VS-8EWF12S-M3Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 1200 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 100 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
APT60D120BG

APT60D120BG

DIODE GP 1.2KV 60A TO247

Microchip Technology

955
RFQ
APT60D120BGDatasheet - TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 250 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
APT60S20BG

APT60S20BG

DIODE SCHOTTKY 200V 75A TO247

Microchip Technology

538
RFQ
APT60S20BGDatasheet - TO-247-2 Tube Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 1 mA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 150°C
GD10MPS12A

GD10MPS12A

DIODE SIL CARB 1.2KV 25A TO220-2

GeneSiC Semiconductor

3,529
RFQ
GD10MPS12ADatasheet SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 25A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC10H065GY-TR

STPSC10H065GY-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

1,273
RFQ
STPSC10H065GY-TRDatasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
VS-20ETF06FP-M3

VS-20ETF06FP-M3

DIODE GP 600V 20A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,061
RFQ
VS-20ETF06FP-M3Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-EPU6006LHN3

VS-EPU6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

895
RFQ
VS-EPU6006LHN3Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
DSI45-16A

DSI45-16A

DIODE GEN PURP 1.6KV 45A TO247AD

IXYS

978
RFQ
DSI45-16ADatasheet - TO-247-2 Tube Active Standard 1600 V 45A 1.28 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 175°C
1N5712-1

1N5712-1

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

1,793
RFQ
1N5712-1Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
IDH05G120C5XKSA1

IDH05G120C5XKSA1

DIODE SIL CARB 1.2KV 5A TO220-1

Infineon Technologies

899
RFQ
IDH05G120C5XKSA1Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-90APS12L-M3

VS-90APS12L-M3

DIODE GEN PURP 1.2KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

1,295
RFQ
VS-90APS12L-M3Datasheet - TO-247-3 Tube Active Standard 1200 V 90A 1.2 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N5615

1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

270
RFQ
1N5615Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
STPSC10H065B-TR

STPSC10H065B-TR

DIODE SIL CARBIDE 650V 10A DPAK

STMicroelectronics

12,231
RFQ
STPSC10H065B-TRDatasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
1N5417

1N5417

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

1,183
RFQ
1N5417Datasheet - Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
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Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

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Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

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