Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
63SPB100ADIODE SCHOTTKY 100V 60A SPD-2A |
4,833 |
|
|
- | SPD-2A | Bulk | Active | Schottky | 100 V | 60A | 870 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 100 V | 1500pF @ 5V, 1MHz | - | - | Surface Mount | SPD-2A | -55°C ~ 175°C |
|
|
STPSC20H12WLDIODE SIL CARB 1.2KV 20A DO247 |
142 |
|
|
ECOPACK®2 | DO-247-2 (Straight Leads) | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | DO-247 | -40°C ~ 175°C |
|
DH60-16ADIODE GEN PURP 1.6KV 60A TO247AD |
892 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1600 V | 60A | 2.04 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 230 ns | 200 µA @ 1400 V | 32pF @ 1200V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 150°C |
|
VS-HFA30PB120-N3DIODE GP 1.2KV 30A TO247AC |
154 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 4.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 170 ns | 40 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
|
IDWD20G120C5XKSA1DIODE SIL CARB 1.2KV 62A TO247-2 |
240 |
|
|
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 62A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 166 µA @ 1200 V | 1368pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
C4D08120EDIODE SIL CARB 1.2KV 24.5A TO252 |
863 |
|
|
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 24.5A | 3 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GD15MPS17HDIODE SIL CARB 1.7KV 36A TO247-2 |
1,214 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 36A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1082pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IDW30G65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 |
931 |
|
|
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
STPSC20H12G2Y-TRDIODE SIL CARB 1.2KV 20A D2PAK |
2,769 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK HV | -40°C ~ 175°C |
|
JANTXV1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
166 |
|
|
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5811USDIODE GEN PURP 150V 3A B SQ-MELF |
148 |
|
|
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
DSDI60-16ADIODE GEN PURP 1.6KV 63A TO247AD |
328 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1600 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
UJ3D06560KSDDIODE SIL CARB 650V 30A TO247-3 |
6,369 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 740 µA @ 650 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
VS-70HFL100S05DIODE GEN PURP 1KV 70A DO203AB |
244 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 1000 V | 70A | 1.85 V @ 219.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 100 µA @ 1000 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -40°C ~ 125°C |
|
VS-85HFR60DIODE GEN PURP 600V 85A DO203AB |
120 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
JANS1N6642DIODE GEN PURP 75V 300MA DO204AH |
434 |
|
|
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
E4D10120ADIODE SIL CARB 1.2KV 33A TO220-2 |
386 |
|
|
E-Series | TO-220-2 | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 200 µA @ 1200 V | 777pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD50MPS12HDIODE SIL CARB 1.2KV 92A TO247-2 |
124 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C4D20120HDIODE SIL CARB 1.2KV 54A TO247-2 |
410 |
|
|
Z-Rec® | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1500pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
E4D20120GDIODE SIL CARB 1.2KV 56A TO263-2 |
2,376 |
|
|
E-Series | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1474pF @ 0V, 1MHz | Automotive | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
Category Overview
Single Diodes Products & Selection Guide
Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.
Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.
FAQ
How do I choose the right Single Diodes?
Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.
Can I order based on the stock shown on this page?
Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.
What if the exact part number I need is not listed?
Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.
Do you provide Datasheets and technical documents?
Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.
