Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6631U

1N6631U

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

7,180
RFQ
1N6631UDatasheet - SQ-MELF, B Bulk Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
1N6628US/TR

1N6628US/TR

DIODE GEN PURP 600V 2.3A D-5B

Microchip Technology

7,660
RFQ
1N6628US/TRDatasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 2.3A 1.5 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V 40pF @ 10V, 1MHz - - Surface Mount D-5B -65°C ~ 150°C
1N6628U/TR

1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,757
RFQ
1N6628U/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6631US/TR

1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology

8,807
RFQ
1N6631US/TRDatasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6631U/TR

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767
RFQ
1N6631U/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411
RFQ
JANTX1N3646Datasheet - S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
GB25MPS17-247

GB25MPS17-247

DIODE SIL CARB 1.7KV 52A TO247-2

GeneSiC Semiconductor

6,756
RFQ
GB25MPS17-247Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 52A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2350pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5832R

1N5832R

DIODE SCHOTTKY REV 20V 40A DO5

GeneSiC Semiconductor

6,546
RFQ
1N5832RDatasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 20 V 40A 520 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5833R

1N5833R

DIODE SCHOTTKY REV 30V 40A DO5

GeneSiC Semiconductor

2,466
RFQ
1N5833RDatasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 30 V 40A 550 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5834R

1N5834R

DIODE SCHOTTKY REV 40V 40A DO5

GeneSiC Semiconductor

6,689
RFQ
1N5834RDatasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 40 V 40A 590 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
HS24515E3

HS24515E3

DIODE SCHOTTKY 15V 240A HALF-PAK

Microsemi Corporation

8,047
RFQ
HS24515E3Datasheet - HALF-PAK Tube Obsolete Schottky 15 V 240A 370 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 150 mA @ 15 V 21700pF @ 5V, 1MHz - - Chassis Mount HALF-PAK -
JANTXV1N6620US

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170
RFQ
JANTXV1N6620USDatasheet - SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709
RFQ
JAN1N6076Datasheet - E, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037
RFQ
JAN1N6077Datasheet - E, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTXV1N6620U

JANTXV1N6620U

DIODE GEN PURP 200V 1.2A D-5A

Microsemi Corporation

3,057
RFQ
JANTXV1N6620UDatasheet - SQ-MELF, A Bulk Active Standard 200 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 200 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
DS75-12B

DS75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

4,175
RFQ
DS75-12BDatasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
DSI75-12B

DSI75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

9,704
RFQ
DSI75-12BDatasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
JAN1N6628U

JAN1N6628U

DIODE GEN PURP 600V 1.75A D-5B

Microsemi Corporation

9,997
RFQ
JAN1N6628UDatasheet - SQ-MELF, E Bulk Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6628US

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873
RFQ
JAN1N6628USDatasheet - SQ-MELF, E Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630U

JAN1N6630U

DIODE GEN PURP 900V 1.4A D-5B

Microsemi Corporation

6,375
RFQ
JAN1N6630UDatasheet - SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C

Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

Can I order based on the stock shown on this page?

Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

What if the exact part number I need is not listed?

Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

Do you provide Datasheets and technical documents?

Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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