Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GKN71/16

GKN71/16

DIODE GEN PURP 1.6KV 95A DO5

GeneSiC Semiconductor

6,077
RFQ
GKN71/16Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
JANTXV1N5621/TR

JANTXV1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,227
RFQ
JANTXV1N5621/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6640/TR

JANTXV1N6640/TR

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

9,903
RFQ
JANTXV1N6640/TRDatasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N6639US/TR

JANTXV1N6639US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

3,836
RFQ
JANTXV1N6639US/TRDatasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5811AUS

1N5811AUS

RECTIFIER DIODE

Microsemi Corporation

3,469
RFQ
1N5811AUSDatasheet - - Bulk Active - - - - - - - - - - - - -
JAN1N5550US/TR

JAN1N5550US/TR

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

3,839
RFQ
JAN1N5550US/TRDatasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5188/TR

JANTX1N5188/TR

DIODE GEN PURP 400V 3A

Microchip Technology

6,788
RFQ
JANTX1N5188/TRDatasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N4153UR-1

JAN1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology

4,423
RFQ
JAN1N4153UR-1Datasheet - DO-213AA Bulk Active Standard 50 V 150mA 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns - - Military MIL-PRF-19500/337 Surface Mount DO-213AA -65°C ~ 175°C
JAN1N3595AUR-1/TR

JAN1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,753
RFQ
JAN1N3595AUR-1/TRDatasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5418US

JANTX1N5418US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

7,496
RFQ
JANTX1N5418USDatasheet - SQ-MELF, E Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 400 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5622

JANTXV1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,223
RFQ
JANTXV1N5622Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5802US/TR

JAN1N5802US/TR

DIODE GEN PURP 50V 2.5A D-5A

Microchip Technology

4,628
RFQ
JAN1N5802US/TRDatasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
GKR71/16

GKR71/16

DIODE GEN PURP 1.6KV 95A DO5

GeneSiC Semiconductor

8,471
RFQ
GKR71/16Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
PCFFS40120AF

PCFFS40120AF

DIODE SIL CARB 1.2KV WAFER DIE

onsemi

2,472
RFQ
PCFFS40120AFDatasheet - Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 61A 1.75 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 2250pf @ 1V, 100kHz - - Surface Mount Die -55°C ~ 175°C
GKR71/12

GKR71/12

DIODE GEN PURP 1.2KV 95A DO5

GeneSiC Semiconductor

8,945
RFQ
GKR71/12Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1200 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
JAN1N5416US

JAN1N5416US

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

3,311
RFQ
JAN1N5416USDatasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5420US

JAN1N5420US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

3,721
RFQ
JAN1N5420USDatasheet - SQ-MELF, E Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N6662

1N6662

DIODE GEN PURP 400V 500MA DO35

Microchip Technology

6,671
RFQ
1N6662Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 400 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N5419US/TR

JANTX1N5419US/TR

UFR,FRR

Microchip Technology

4,193
RFQ
JANTX1N5419US/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
SICPT40120YA-BP

SICPT40120YA-BP

SCHOTTKY DIODES

Micro Commercial Co

6,954
RFQ
SICPT40120YA-BPDatasheet - TO-247-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 40A 1.58 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 38 µA @ 1200 V 2900pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C

Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

Can I order based on the stock shown on this page?

Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

What if the exact part number I need is not listed?

Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

Do you provide Datasheets and technical documents?

Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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