Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR20A02

FR20A02

DIODE GEN PURP 50V 20A DO5

GeneSiC Semiconductor

5,488
RFQ
FR20A02Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 50 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20B02

FR20B02

DIODE GEN PURP 100V 20A DO5

GeneSiC Semiconductor

9,514
RFQ
FR20B02Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20D02

FR20D02

DIODE GEN PURP 200V 20A DO5

GeneSiC Semiconductor

5,103
RFQ
FR20D02Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20G02

FR20G02

DIODE GEN PURP 400V 20A DO5

GeneSiC Semiconductor

2,977
RFQ
FR20G02Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20J02

FR20J02

DIODE GEN PURP 600V 20A DO5

GeneSiC Semiconductor

5,574
RFQ
FR20J02Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
1N5807US/TR

1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

8,942
RFQ
1N5807US/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809US/TR

1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,988
RFQ
1N5809US/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
GD30MPS12J

GD30MPS12J

DIODE SIL CARB 1.2KV 59A TO263-7

GeneSiC Semiconductor

5,115
RFQ
GD30MPS12JDatasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 1200 V 59A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 1101pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
IDC40D120T6MX1SA4

IDC40D120T6MX1SA4

DIODE GP 1.2KV 75A WAFER

Infineon Technologies

9,611
RFQ
IDC40D120T6MX1SA4Datasheet - Die Bulk Obsolete Standard 1200 V 75A 2.05 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - 14 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
JAN1N5415US

JAN1N5415US

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,713
RFQ
JAN1N5415USDatasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
GAP3SLT33-220FP

GAP3SLT33-220FP

DIODE SIC 3.3KV 300MA TO220FP

GeneSiC Semiconductor

2,729
RFQ
GAP3SLT33-220FPDatasheet SiC Schottky MPS™ TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 3300 V 300mA 1.7 V @ 300 mA - 0 ns 5 µA @ 3300 V 42pF @ 1V, 1MHz - - Through Hole TO-220FP -55°C ~ 175°C
CDLL5195

CDLL5195

DIODE GP 180V 200MA DO213AA

Microchip Technology

7,506
RFQ
CDLL5195Datasheet - DO-213AA Bulk Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 µA @ 180 V - - - Surface Mount DO-213AA -65°C ~ 175°C
VS-72HFL100S05

VS-72HFL100S05

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

3,345
RFQ
VS-72HFL100S05Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HFLR100S05

VS-72HFLR100S05

DIODE GP REV 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

8,205
RFQ
VS-72HFLR100S05Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
APT60D100SG/TR

APT60D100SG/TR

DIODE GEN PURP 1KV 60A D3PAK

Microchip Technology

4,993
RFQ
APT60D100SG/TRDatasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 1000 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - - - Surface Mount D3PAK -55°C ~ 175°C
MNS1N5811US/TR

MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

6,349
RFQ
MNS1N5811US/TRDatasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5807US

JAN1N5807US

DIODE GEN PURP 50V 6A B SQ-MELF

Microchip Technology

6,768
RFQ
JAN1N5807USDatasheet - SQ-MELF, B Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5186

JANTX1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,791
RFQ
JANTX1N5186Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5551US

JAN1N5551US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

9,654
RFQ
JAN1N5551USDatasheet - SQ-MELF, E Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5809US/TR

JANTX1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

7,897
RFQ
JANTX1N5809US/TRDatasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C

Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

Can I order based on the stock shown on this page?

Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

What if the exact part number I need is not listed?

Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

Do you provide Datasheets and technical documents?

Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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