Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S25M

S25M

DIODE GEN PURP 1KV 25A DO203AA

GeneSiC Semiconductor

6,530
RFQ
S25MDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25MR

S25MR

DIODE GEN PURP 1KV 25A DO220AA

GeneSiC Semiconductor

7,691
RFQ
S25MRDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25Q

S25Q

DIODE GEN PURP 1.2KV 25A DO203AA

GeneSiC Semiconductor

8,868
RFQ
S25QDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25QR

S25QR

DIODE GEN PURP 1.2KV 25A DO220AA

GeneSiC Semiconductor

3,266
RFQ
S25QRDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
BYT30P-1000

BYT30P-1000

DIODE GEN PURP 1KV 30A SOD93-2

STMicroelectronics

3,725
RFQ
BYT30P-1000Datasheet - SOD-93-2 Tube Obsolete Standard 1000 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 100 µA @ 1000 V - - - Through Hole SOD-93-2 -40°C ~ 150°C
VS-80PF160W

VS-80PF160W

DIODE GEN PURP 1.6KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

6,828
RFQ
VS-80PF160WDatasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 80A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 150°C
1N4942

1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

4,966
RFQ
1N4942Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5806/TR

JAN1N5806/TR

DIODE GEN PURP 150V 2.5A

Microchip Technology

2,346
RFQ
JAN1N5806/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 150 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417/TR

1N5417/TR

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

2,832
RFQ
1N5417/TRDatasheet - Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
1N4942-1

1N4942-1

DIODE GEN PURP 200V 1A

Microchip Technology

5,122
RFQ
1N4942-1Datasheet - Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole - -65°C ~ 175°C
VS-95PF40

VS-95PF40

DIODE GEN PURP 400V 95A DO203AB

Vishay General Semiconductor - Diodes Division

7,115
RFQ
VS-95PF40Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PFR40

VS-95PFR40

DIODE GP REV 400V 95A DO203AB

Vishay General Semiconductor - Diodes Division

2,212
RFQ
VS-95PFR40Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N3613

1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,712
RFQ
1N3613Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N3611/TR

JANTX1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

9,926
RFQ
JANTX1N3611/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N3611E3/TR

1N3611E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,493
RFQ
1N3611E3/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
1N5615E3/TR

1N5615E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,687
RFQ
1N5615E3/TRDatasheet - Axial Tape & Reel (TR) Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
LSIC2SD065E16CCA

LSIC2SD065E16CCA

DIODE SIL CARB 650V 23A TO247AD

Littelfuse Inc.

9,958
RFQ
LSIC2SD065E16CCADatasheet GEN2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 415pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
IDB10S60C

IDB10S60C

DIODE SIL CARB 600V 10A TO263-3

Infineon Technologies

3,731
RFQ
IDB10S60CDatasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 600 V 480pF @ 1V, 1MHz - - Surface Mount PG-TO263-3-2 -55°C ~ 175°C
JAN1N4942/TR

JAN1N4942/TR

DIODE GEN PURP 200V 1A

Microchip Technology

2,781
RFQ
JAN1N4942/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
BAV45

BAV45

DIODE GEN PURP 20V 50MA TO18

Central Semiconductor Corp

8,712
RFQ
BAV45Datasheet - TO-18-2 Bulk Obsolete Standard 20 V 50mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 600 ns 5 pA @ 5 V 1.3pF @ 0V, 1MHz - - Through Hole TO-18 -65°C ~ 125°C

Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

Can I order based on the stock shown on this page?

Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

What if the exact part number I need is not listed?

Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

Do you provide Datasheets and technical documents?

Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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