Single Diodes

Manufacturers Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-50PFR120

VS-50PFR120

DIODE GP REV 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

7,918
RFQ
VS-50PFR120Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 50A 1.4 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
SCS206AMC

SCS206AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

9,883
RFQ
SCS206AMCDatasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
LSIC2SD120C05

LSIC2SD120C05

DIODE SIC 1.2KV 18.1A TO252L

Littelfuse Inc.

7,658
RFQ
LSIC2SD120C05Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 18.1A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 310pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
1N5614/TR

1N5614/TR

DIODE GEN PURP 200V 1A

Microchip Technology

6,641
RFQ
1N5614/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Through Hole A, Axial -65°C ~ 200°C
GKN26/04

GKN26/04

DIODE GEN PURP 400V 25A DO4

GeneSiC Semiconductor

8,234
RFQ
GKN26/04Datasheet - DO-203AA, DO-4, Stud Bulk Obsolete Standard 400 V 25A 1.55 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 400 V - - - Chassis, Stud Mount DO-4 -40°C ~ 180°C
JAN1N3613

JAN1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,247
RFQ
JAN1N3613Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N3611/TR

JAN1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

5,534
RFQ
JAN1N3611/TRDatasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N485A/TR

1N485A/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

7,930
RFQ
1N485A/TRDatasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
1N485/TR

1N485/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

5,048
RFQ
1N485/TRDatasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
DSC10065

DSC10065

DIODE SIL CARB 650V 10A TO220AC

Diodes Incorporated

7,449
RFQ
DSC10065Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 400pF @ 100mV, 1MHz - - Through Hole TO220AC (Type WX) -55°C ~ 175°C
VS-12FL60S05

VS-12FL60S05

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,102
RFQ
VS-12FL60S05Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-12FLR60S05

VS-12FLR60S05

DIODE GP REV 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,163
RFQ
VS-12FLR60S05Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-60APU06HN3

VS-60APU06HN3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

6,511
RFQ
VS-60APU06HN3Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AC -55°C ~ 175°C
VS-16FL20S02

VS-16FL20S02

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

2,066
RFQ
VS-16FL20S02Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 16A 1.4 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 50 µA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
SCS306APC9

SCS306APC9

DIODE SILICON CARBIDE 650V 6A

Rohm Semiconductor

4,796
RFQ
SCS306APC9Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
VS-90APF06L-M3

VS-90APF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

7,783
RFQ
VS-90APF06L-M3Datasheet - TO-247-3 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-90EPF06L-M3

VS-90EPF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

6,529
RFQ
VS-90EPF06L-M3Datasheet - TO-247-2 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N649UR-1/TR

1N649UR-1/TR

DIODE GP 600V 400MA DO213AA

Microchip Technology

7,297
RFQ
1N649UR-1/TRDatasheet - DO-213AA Tape & Reel (TR) Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - - - Surface Mount DO-213AA -65°C ~ 175°C
S16B

S16B

DIODE GEN PURP 100V 16A DO203AA

GeneSiC Semiconductor

6,898
RFQ
S16BDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S16BR

S16BR

DIODE GEN PURP 100V 16A DO220AA

GeneSiC Semiconductor

2,598
RFQ
S16BRDatasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C

Category Overview

Single Diodes Products & Selection Guide

Single Diodes are widely used in industrial automation, automotive electronics, communication equipment, consumer electronics, new energy systems, and many other electronic applications. We offer products from multiple manufacturers, packages, and specifications to help engineers and buyers compare and source suitable components.

Use the manufacturer, key specification, availability, and Datasheet filters to narrow down the right Single Diodes. If the exact part is not listed, submit an inquiry and our team can help check stock, lead time, and suitable alternatives.

FAQ

How do I choose the right Single Diodes?

Start with the required electrical specifications, package, operating temperature, application conditions, and manufacturer preference, then compare availability and lead time.

Can I order based on the stock shown on this page?

Inventory can change with supply conditions. For project or volume requirements, please submit an inquiry so current stock, pricing, and lead time can be confirmed.

What if the exact part number I need is not listed?

Send us the part number and required quantity. We can help source hard-to-find parts and suggest suitable alternatives based on key specifications.

Do you provide Datasheets and technical documents?

Yes. Use the Datasheet links in the product list to view available technical documents. If a document is unavailable, contact us and we can help check it.

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